SI2308 MOSFET — Features, Uses, and Complete Specifications

The SI2308 is a compact and efficient N-channel MOSFET widely used in low-voltage switching and power management circuits. Manufactured by Vishay Siliconix, this transistor offers a great balance between high voltage tolerance (60V) and low ON-resistance (RDS(on)), making it suitable for DC-DC converters, load switches, and motor drivers in compact electronics.

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Overview

The SI2308 MOSFET is designed for fast switching, low conduction losses, and logic-level gate control. Its SOT-23 package makes it ideal for space-constrained PCB designs like portable devices, battery-powered systems, and embedded controllers.

Thanks to its low gate charge (Qg) and low RDS(on), it enables efficient operation even when driven directly from microcontroller GPIO pins.

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⚙️ Key Features of SI2308

• Type: N-Channel Enhancement MOSFET
• High Drain-Source Voltage: Up to 60V
• Low ON-Resistance (RDS(on)): Reduces power losses and heating
• Logic-Level Gate Drive: Works with 3.3V and 5V control signals
• Fast Switching Speed: Suitable for PWM and high-frequency circuits
• Compact SOT-23 Package: Ideal for portable and miniature electronics
• High Efficiency: Excellent for low-voltage and high-current designs

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⚡ Common Applications of SI2308

The SI2308 is versatile and finds applications in a wide range of electronic projects and commercial designs.

1. DC-DC Converters

Used as a high-side or low-side switching MOSFET in buck and boost converters due to its efficiency and low gate charge.

2. Load Switching

Ideal for switching LED strips, relays, sensors, and logic-controlled power rails.

⚙️ 3. Motor Drivers

Employed in small DC motor and stepper motor control circuits.

️ 4. Embedded Systems

Used for GPIO-controlled power switching, especially in microcontroller and Arduino-based designs.

5. Battery-Powered Devices

Efficient performance makes it suitable for battery management and power-saving systems.

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Technical Specifications of SI2308

Parameter                                                                      Specification

Type                                                                                N-Channel MOSFET

Drain-Source Voltage (VDS)                                        60V

Gate-Source Voltage (VGS)                                         ±20V

Continuous Drain Current (ID)                                  2.1A (at Ta = 25°C)

Pulsed Drain Current (IDM)                                       10A (max)

RDS(on)                                                                         0.156Ω @ VGS = 10V0.192Ω @ VGS = 4.5V

Gate Threshold Voltage (Vth)                                     1.0V to 2.5V

Total Gate Charge (Qg)                                               ~2.3nC

Power Dissipation (Pd)                                                 1.25W (max at 25°C)

Package Type                                                                 SOT-23

Operating Temperature Range                                   -55°C to +150°C

Note: Always check the latest Vishay datasheet for the most accurate and updated specifications.

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Advantages of Using SI2308

• Compact and easy to integrate into modern PCB designs
• Low conduction losses ensure cooler operation
• Fast switching capability supports PWM-based designs
• Logic-level control allows direct interfacing with 3.3V/5V MCUs
• Reliable operation under a wide range of voltages and currents

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Summary

The SI2308 MOSFET is a power-efficient N-channel transistor ideal for low-voltage, high-frequency, and compact power applications. Its 60V voltage rating, low RDS(on), and logic-level control make it one of the most reliable choices for designers working on DC-DC converters, load drivers, and battery-operated devices.

If you’re designing compact and efficient circuits requiring fast switching and high reliability, the SI2308 is a dependable and cost-effective MOSFET solution.