Infineon Expands CoolSiC™ JFET Portfolio

 

Infineon Expands CoolSiC™ JFET Portfolio: A New Generation of Silicon Carbide Power Devices for AI Data Centers and Industrial Power Systems

Power semiconductor technology is evolving rapidly as industries demand higher efficiency, greater reliability, and improved power density. Traditional silicon MOSFETs have dominated power conversion for decades, but emerging applications such as AI data centers, electric vehicles, battery energy storage systems, and industrial DC power distribution are pushing conventional devices close to their practical limits.

To address these challenges, Infineon Technologies announced on June 2, 2026, a significant expansion of its CoolSiC™ JFET portfolio. The announcement introduces new 750 V and 1200 V silicon carbide (SiC) JFET devices, additional package options, and new normally-off configurations designed for solid-state power protection and high-efficiency DC power distribution. The new portfolio specifically targets AI data centers, battery disconnect systems, solid-state circuit breakers, industrial power supplies, and energy storage applications.

 

What Has Infineon Announced?

The latest expansion includes several important additions to the CoolSiC™ family.

New Products

·         750 V CoolSiC™ JFET devices

·         1200 V CoolSiC™ JFET devices

·         Normally-off CoolSiC™ JFET solutions

·         New TO-247-4 package

·         Q-DPAK package now entering mass production

·         Dual Drive configuration

·         Cascode configuration

Rather than releasing a single component, Infineon has expanded an entire platform of SiC JFET solutions to address different system architectures and gate-drive requirements.

 

Why Is This Launch Important?

For many years, silicon carbide devices have mainly been used in:

·         EV traction inverters

·         Solar inverters

·         Fast EV chargers

·         Industrial motor drives

Infineon’s latest launch shows another major industry shift.

The company is now targeting applications where semiconductor switches spend most of their operating life fully turned on, while fault conditions occur only occasionally.

Examples include:

·         Solid-state circuit breakers

·         Battery disconnect switches

·         Data center power distribution

·         Hot-swap controllers

·         eFuse protection

In these systems, conduction loss becomes more important than switching loss.

That is precisely where SiC JFET technology offers major advantages.

 

Understanding Silicon Carbide JFET Technology

Most power engineers are familiar with MOSFETs and IGBTs.

JFETs (Junction Field-Effect Transistors) are less common in modern power electronics, but silicon carbide has renewed interest in this technology.

Unlike MOSFETs, which use an insulated gate, a JFET controls current by varying the depletion region of a PN junction.

When implemented using silicon carbide, the result is a device that offers:

·         Extremely low on-resistance

·         High thermal capability

·         Excellent short-circuit robustness

·         Strong avalanche capability

·         High reliability under overload conditions

These characteristics make SiC JFETs particularly attractive for power distribution and protection applications rather than only high-frequency converters.

 

New Normally-Off Configuration

One of the biggest announcements is the introduction of normally-off CoolSiC™ JFET configurations.

Historically, many JFETs were normally-on devices.

This created additional gate-drive complexity because designers needed to ensure the device remained turned off during startup or fault conditions.

Infineon addresses this by integrating:

·         a CoolSiC™ JFET

·         an OptiMOS™ low-voltage silicon MOSFET

inside a single package.

This approach creates a normally-off device while preserving the electrical benefits of the SiC JFET.

The result is easier system integration without sacrificing efficiency.

 

Dual Drive and Cascode Options

Infineon introduced two new configurations to simplify different design approaches.

Dual Drive

The Dual Drive configuration provides independent gate access to both the SiC JFET and the silicon MOSFET.

Advantages include:

·         Greater design flexibility

·         Independent gate optimization

·         Around 10% lower RDS(on) when operated with overdrive conditions

·         Better optimization for high-performance industrial systems

Cascode Configuration

The Cascode version internally connects the JFET gate.

Engineers only need to drive the MOSFET gate using conventional gate drivers.

Benefits include:

·         Simple implementation

·         No specialized gate-driver circuitry

·         Easier replacement of existing MOSFET designs

·         Reduced development time

This configuration is particularly attractive for engineers transitioning from silicon MOSFETs to silicon carbide technology.

 

Extremely Low On-Resistance

One of the most impressive specifications is the exceptionally low RDS(on).

The new production devices achieve:

·         1.6 mΩ for the 750 V version

·         2.3 mΩ for the 1200 V version in Q-DPAK

Infineon is also introducing a 1200 V TO-247-4 version with RDS(on) starting at 5.0 mΩ, enabling designers to replace existing SiC MOSFETs in standard through-hole layouts without redesigning the PCB.

 

Why AI Data Centers Need These Devices

Modern AI servers require enormous amounts of electrical power.

Individual racks now consume tens to hundreds of kilowatts, making every watt of loss significant.

In these environments:

·         devices remain ON almost continuously,

·         conduction losses dominate,

·         protection must react in microseconds.

Solid-state protection using CoolSiC™ JFETs enables switching that is orders of magnitude faster than electromechanical protection, helping isolate faults quickly, reduce equipment damage, and improve uptime.

 

Applications

Infineon targets a broad range of high-power systems.

AI Data Centers

·         Power Supply Units (PSUs)

·         Intermediate Bus Converters (IBCs)

·         Hot-swap controllers

·         eFuse protection

·         Power Backup Units

Industrial Applications

·         Solid-state circuit breakers

·         Industrial safety relays

·         DC microgrids

·         Factory automation

Automotive

·         Battery disconnect switches

·         High-voltage battery protection

·         EV power distribution

Renewable Energy

·         Battery Energy Storage Systems (BESS)

·         Solar DC distribution

·         Grid infrastructure

 

Benefits for Power Electronics Designers

For engineers designing SMPS, EV chargers, and industrial converters, this launch offers several practical advantages.

Reduced Conduction Losses

Lower RDS(on) directly reduces heat generation.

Higher Power Density

Less heat means smaller heatsinks and more compact power systems.

Better Thermal Performance

Infineon’s .XT interconnection technology improves heat transfer and robustness under pulsed and cyclic loads.

Faster Fault Isolation

Solid-state protection responds much faster than mechanical contactors, helping protect expensive equipment.

Easy Migration

The TO-247-4 package allows many existing SiC MOSFET designs to adopt the new device with minimal PCB changes.

 

Impact on the Power Electronics Industry

This launch reflects a broader industry trend.

Wide-bandgap semiconductors are no longer limited to high-frequency power conversion. They are becoming key components in:

·         DC power distribution

·         AI infrastructure

·         Battery protection

·         Solid-state switching

·         Intelligent industrial power systems

As AI computing and electrification continue to grow, the need for highly efficient, reliable, and fast-acting protection devices will increase. Infineon’s expanded CoolSiC™ JFET portfolio positions it to address these emerging applications.

 

Designer’s Perspective

From a power electronics design perspective, this announcement is particularly relevant because it shifts attention from switching efficiency to conduction efficiency.

Many engineers focus on reducing switching losses in converters, but in systems such as battery disconnects, eFuses, and solid-state circuit breakers, the semiconductor spends most of its life in the ON state. In these cases, ultra-low on-resistance, thermal stability, and fault robustness become more important than switching speed.

For designers of EV chargers, industrial power supplies, battery energy storage systems, and high-power DC distribution networks, these devices offer a path toward smaller, cooler, and more reliable protection systems without major redesigns.

 

Conclusion

Infineon’s expansion of its CoolSiC™ JFET portfolio marks an important milestone in the evolution of silicon carbide power semiconductors. By introducing new 750 V and 1200 V devices, normally-off configurations, and designer-friendly package options, the company is addressing the growing demand for efficient, robust, and intelligent power distribution.

As AI infrastructure, electrified transportation, and renewable energy systems continue to expand, power semiconductors optimized for conduction efficiency and rapid fault isolation are expected to become an increasingly important part of next-generation power electronic systems.

 

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Infineon Expands CoolSiC™ JFET Portfolio: New 750V and 1200V SiC Power Devices for AI Data Centers and Industrial Applications

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Infineon launches new CoolSiC™ JFET power devices with 750V and 1200V ratings, normally-off configurations, and ultra-low RDS(on) for AI data centers, EVs, industrial power systems, and solid-state protection.