Week Ending: 6 September 2026

The first week of September 2026 has brought several interesting developments across power semiconductors, microcontrollers, EV electronics, AI infrastructure and semiconductor packaging.

A particularly strong theme this week is the continued evolution of GaN power technology. Two developments stand out: Navitas and GlobalFoundries are moving Gen 5 GaN devices toward U.S.-based 200 mm production, while EPC has started mass production of integrated 100 V GaN power-stage ICs for motion-control applications.

At the same time, ROHM has introduced a new generation of 650 V IGBTs for EV auxiliary systems, while Microchip is bringing a high-performance digital signal controller aimed at power conversion, motor control and AI-server power supplies.

Here are the major developments.

1. Navitas and GlobalFoundries Introduce U.S.-Manufactured Gen 5 GaNFast Power Devices

Companies: Navitas Semiconductor and GlobalFoundries
Technology: Gen 5 GaNFast™ power devices
Announcement: 1 September 2026

One of the most important power-semiconductor developments this week came from Navitas Semiconductor and GlobalFoundries (GF).

The companies announced that Navitas’ latest-generation GaNFast technology is being adapted to GlobalFoundries’ 200 mm GaN-on-silicon manufacturing platform in the United States. The initial product family is expected to consist of 650 V GaN FETs with RDS(on) options of 11 mΩ, 18 mΩ, 50 mΩ, 120 mΩ and 150 mΩ.

The first wafers are scheduled to ship during September 2026, with internal samples planned for October and strategic-customer samples expected before the end of 2026.

Why This Is Important

The significance goes beyond the electrical specifications. Moving GaN production onto a 200 mm manufacturing platform can provide advantages in manufacturing scalability and supply-chain resilience. The devices target applications including:

· AI data centers

· High-performance computing

· Industrial power conversion

· Critical infrastructure

· High-power-density power supplies

Impact on Power Electronics

GaN is particularly attractive when high switching frequency and high power density are important. Compared with conventional silicon MOSFETs, GaN devices can provide:

· Lower switching losses

· Higher switching frequency

· Reduced magnetic-component size

· Higher power density

· Faster transient response

For an engineer designing an AC-DC converter or high-frequency DC-DC stage, this can potentially translate into a smaller magnetic section and a more compact overall power supply. However, GaN also places greater demands on:

· PCB layout

· Gate-drive design

· EMI control

· Dead-time optimization

· Parasitic inductance management

The higher switching speed means that the complete power-loop design becomes critical. Navitas says the initial Gen 5 family is being manufactured using GF’s U.S. 200 mm GaN-on-silicon capability.

2. EPC Begins Mass Production of 100 V Integrated GaN Power-Stage ICs

Company: Efficient Power Conversion (EPC)
Products: EPC23108, EPC23109, EPC23110 and EPC23111
Announcement: 3 September 2026

Another major GaN development this week came from Efficient Power Conversion (EPC). EPC has started mass production of four 100 V integrated GaN power-stage ICs:

· EPC23108

· EPC23109

· EPC23110

· EPC23111

The devices integrate the high-side and low-side eGaN FETs together with gate-drive and level-shifting circuitry. The EPC23108 and EPC23109 support load currents up to approximately 35 A, while the EPC23110 and EPC23111 support up to approximately 20 A.

What Is Interesting About This Architecture?

A conventional half-bridge may require:

High-side MOSFET + Low-side MOSFET + Gate driver + Bootstrap/level shifting + Protection

EPC integrates much of this functionality into a single power-stage IC. The resulting architecture can reduce:

· Component count

· PCB area

· Parasitic inductance

· Gate-loop length

· Design complexity

Target Applications

The devices are particularly interesting for:

· Robotic systems

· Humanoid robots

· Drones

· Industrial motor drives

· Medical equipment

· Synchronous rectification

· High-density DC/DC converters

The combination of GaN switching devices and integrated drivers is particularly attractive for compact motor-control systems.

Why It Matters

Robotics is becoming an important new application for power electronics. A robot may contain dozens of motor-control channels, and every motor-control PCB needs:

DC bus → Power stage → Motor

Reducing the size and losses of each power stage can therefore have a significant system-level impact. EPC’s move into mass production also indicates that integrated GaN power stages are moving beyond evaluation and toward broader production deployment.

3. ROHM Introduces Fourth-Generation 650 V IGBTs for EV Auxiliary Systems

Company: ROHM Semiconductor
Technology: Fourth-generation 650 V IGBTs
Announcement: 31 August 2026

ROHM introduced its fourth-generation 650 V IGBT family, targeting automotive auxiliary systems and industrial power electronics. The new devices achieve a VCE(sat) of 1.55 V, while maintaining a short-circuit withstand time of approximately 7 µs at 25°C.

Automotive versions are designed to meet the AEC-Q101 reliability standard.

Target Applications

The devices are intended for:

· EV electric compressors

· High-voltage heaters

· PTC heaters

· Coolant heaters

· Industrial inverters

· Motor drives

· Compressor drives

Why IGBTs Still Matter in EVs

There is a tendency to assume that SiC will replace silicon IGBTs everywhere in an EV.

That is not necessarily the case. High-power traction inverters are increasingly moving toward SiC, but many auxiliary systems operate at lower power levels where the economics of silicon IGBTs remain attractive. For these applications, designers need a balance between:

Efficiency + cost + robustness + thermal performance

A 650 V IGBT can therefore remain a practical choice.

The Importance of Short-Circuit Withstand

The 7 µs short-circuit withstand capability is particularly relevant to inverter designers.

When a fault occurs, the controller needs time to:

1. Detect excessive current

2. Confirm the fault

3. Disable the gate signal

4. Protect the semiconductor

If the device fails before the protection system can react, catastrophic damage can occur. Therefore, a lower VCE(sat) must not come at the expense of adequate short-circuit capability. ROHM says its fourth-generation devices were redesigned to improve the balance between low conduction losses and short-circuit robustness.

4. Microchip dsPIC33AK256MPS306 Brings High-Speed Digital Control to Power Electronics

Company: Microchip Technology
Product: dsPIC33AK256MPS306
Availability update: 3 September 2026

Microchip’s dsPIC33AK256MPS306 digital signal controller also gained attention this week as it became available through Mouser. This is a particularly interesting device for power-electronics engineers because it combines a high-performance MCU architecture with peripherals designed specifically for fast control applications.

Key specifications include:

· 200 MHz 32-bit digital signal controller

· Up to 256 KB Flash

· Up to 64 KB SRAM

· 40 MSPS 12-bit ADC

· High-speed analog peripherals

· 100 MHz operational amplifiers

· Fast comparators

· High-resolution PWM

· Hardware cryptography

· Post-quantum cryptography support

· 32/64-bit floating-point capability

· Small VQFN/TQFP packages

The device is aimed at applications including server power supplies, AI data centers, industrial automation, motor control and high-frequency SiC/GaN power converters.

Why This Is Interesting for Power Electronics

A conventional MCU may provide sufficient computational power, but power-conversion control also requires very fast peripherals.

For example:

ADC → Control algorithm → PWM update

must happen within a tightly controlled time interval.

A digital power controller needs:

· Fast ADC acquisition

· Fast PWM generation

· Deterministic interrupt response

· High-speed comparators

· Accurate timing

This is where a DSC such as the dsPIC33AK family becomes attractive.

Application in a Digital PFC

A digital PFC controller could use the device to:

1. Measure input voltage

2. Measure inductor current

3. Calculate the current-reference waveform

4. Execute the compensator

5. Update the PWM

6. Monitor protection signals

The high-speed analog and PWM peripherals reduce the amount of external hardware required.

For engineers working with digital PFC, LLC, buck/boost converters or motor drives, this type of controller is particularly relevant.

5. AMD Adds UCIe Connectivity to Versal RF Adaptive SoCs

Company: AMD
Technology: UCIe 1.1
Product family: Versal RF Series
Announcement: 25 August 2026

AMD announced that selected Versal RF Series adaptive SoCs will support native UCIe 1.1 connectivity. Although the announcement occurred at the end of August, it remains an important development for this week’s semiconductor technology discussion.

The devices can support:

· Up to four UCIe-SP interfaces

· Up to two UCIe-AP interfaces

· Multi-terabit-per-second aggregate in-package bandwidth

The Versal RF family combines:

· RF data converters

· DSP

· AI Engines

· Programmable logic

AMD says UCIe will allow the SoCs to communicate directly with specialized chiplets for functions such as:

· AI acceleration

· RF processing

· CPUs

· GPUs

· Security

· Communications

· Custom ASIC processing

Production chiplets are expected with selected Versal RF devices in Q4 2027.

Why UCIe Matters

Traditional SoCs integrate most functions into one large die. Chiplet architectures take a different approach:

Compute chiplet + AI chiplet + RF chiplet + memory/interface chiplet

The components are connected inside a common package.

This can provide:

· Design flexibility

· Lower interconnect distance

· Lower latency

· Potential power savings

· IP reuse

· Faster product development

For semiconductor engineers, UCIe represents an important transition from monolithic SoCs toward modular semiconductor systems.

6. Vishay Introduces Automotive-Grade Common-Mode Chokes

Company: Vishay Intertechnology
Announcement: 31 August 2026

Vishay introduced new automotive-grade ferrite common-mode chokes designed for EMI filtering in vehicle electronics. The components are intended to provide high common-mode impedance while maintaining low DC resistance. Applications include:

· Automotive power supplies

· Communication interfaces

· EV electronics

· Automotive control modules

Why It Matters

As EV electronics become faster and more densely packed, electromagnetic interference becomes a major design consideration. Modern EV systems contain:

· High-frequency DC/DC converters

· Inverters

· Battery chargers

· Motor drives

· High-speed communication buses

Each switching converter can generate common-mode noise. A common-mode choke provides impedance to unwanted common-mode currents while allowing the desired differential-mode current to flow. This makes it an important component in the EMI-control chain:

Switching converter → Common-mode noise → Filter → Cable/load

Vishay’s new automotive-grade components are therefore another example of supporting components evolving alongside high-speed power electronics.

7. India’s Semiconductor Ecosystem Moves Toward SEMICON India 2026

Event: SEMICON India 2026
Dates: 17–19 September 2026
Location: Yashobhoomi, New Delhi

Although not a component launch, an important semiconductor industry development for Indian engineers is the upcoming SEMICON India 2026 event. The fifth edition is scheduled for 17–19 September 2026 in New Delhi under the theme:

“Silicon to Systems: Building the Ecosystem.”

The event is expected to bring together semiconductor manufacturers, equipment suppliers, materials companies, chip designers and ecosystem partners. The event is particularly significant because India’s semiconductor ecosystem is expanding across:

· Chip design

· Semiconductor fabrication

· OSAT

· Compound semiconductors

· Power electronics

· Semiconductor materials

· Equipment

· Advanced packaging

Media registration for the event opened this week.

Why It Matters

For Indian electronics engineers, this is more than an industry exhibition.

India’s semiconductor ecosystem is increasingly moving from:

Design services → Semiconductor manufacturing → Packaging → Complete electronics ecosystem

This could create opportunities for engineers in:

· IC design

· Power semiconductor design

· Embedded systems

· Semiconductor testing

· Packaging

· Reliability engineering

· Equipment engineering

Technology Trend of the Week

GaN Is Moving Toward Higher Integration

Two of this week’s most important power-semiconductor developments involve GaN.

Navitas and GlobalFoundries are working toward scalable 650 V GaN FET production, while EPC is mass-producing 100 V integrated GaN power stages.

These represent two different directions.

High-Voltage GaN

650 V GaN FET

Target:

· AI data centers

· High-power computing

· Industrial power supplies

· High-density AC/DC converters

Integrated GaN

100 V GaN power-stage IC

Target:

· Robotics

· Drones

· Motor drives

· DC/DC converters

The overall direction is clear:

GaN → Higher voltage + higher integration + higher power density

Engineer’s Perspective

This week’s developments demonstrate an important shift in power-electronics engineering.

The semiconductor itself is becoming only one part of the design problem.

Consider a modern power converter:

Power semiconductor

↓

Gate driver

↓

Digital controller

↓

Current/voltage sensing

↓

Isolation

↓

EMI filter

↓

Thermal management

All of these elements must work together. The Navitas and EPC developments show how GaN is addressing switching efficiency and power density. ROHM’s IGBTs demonstrate that silicon remains relevant in cost-sensitive and auxiliary EV applications.

Microchip’s dsPIC33AK256MPS306 shows how digital controllers are evolving to handle increasingly demanding control loops. And Vishay’s automotive EMI components demonstrate that higher switching speed also creates new challenges in electromagnetic compatibility.

For engineers designing EV chargers, PFC stages, LLC converters, motor drives and industrial power supplies, these developments are highly relevant because they directly affect future component selection and system architecture.

What Power Electronics Engineers Should Watch

The developments this week suggest several technologies worth monitoring closely:

1. 650 V GaN

GaN is expanding into higher-power applications and could increasingly compete with silicon and, in some applications, SiC.

2. Integrated GaN Power Stages

Integration of switches and drivers can significantly simplify high-frequency converter design.

3. Digital Power Controllers

High-speed DSCs and MCUs are becoming increasingly capable of controlling complex power-conversion systems.

4. 48 V and High-Voltage Auxiliary Systems

Automotive and data-center architectures continue moving toward higher distribution voltages.

5. Chiplet-Based Computing

UCIe could fundamentally change how future semiconductor systems are assembled.

Conclusion

The week ending 6 September 2026 has been particularly interesting for power-electronics engineers.

The most important development is perhaps the continued maturation of GaN technology.

Navitas and GlobalFoundries are pushing 650 V GaN toward scalable 200 mm U.S. manufacturing, while EPC is bringing integrated 100 V GaN power stages into mass production.

At the same time, ROHM’s fourth-generation 650 V IGBTs demonstrate that silicon power devices remain relevant for EV auxiliary applications where cost, efficiency and robustness must be balanced.

Microchip’s dsPIC33AK256MPS306 highlights another major trend: digital control is becoming increasingly important in power electronics, particularly as converters move toward higher switching frequencies and more sophisticated control algorithms.

Finally, AMD’s adoption of UCIe shows that semiconductor architecture itself is changing, with chiplets increasingly replacing the idea of a single monolithic SoC.

For electronics engineers, the message is clear:

The future of electronics will be defined not by one semiconductor technology, but by the combination of advanced power devices, intelligent controllers, high-speed sensing, advanced packaging and system-level integration.