Toshiba Introduces a 3.3 kV, 800 A SiC MOSFET Power Module

 Toshiba Electronic Devices & Storage Corporation has expanded its silicon-carbide (SiC) power semiconductor portfolio with the IX800FXF2YMS4, a high-power dual-SiC-MOSFET module designed for industrial power-conversion systems.

The module has a drain-source voltage rating of 3,300 V and a continuous drain-current rating of 800 A. It uses Toshiba's third-generation SiC MOSFET technology and incorporates a diode section with a specified surge-current capability intended to improve reliability under abnormal operating conditions.

Toshiba announced the product in September 2026. The module is intended for applications including railway traction inverters, renewable-energy conversion, industrial motor drives, uninterruptible power supplies (UPS), energy-storage systems and solid-state transformers (SSTs).

The development is significant because high-voltage SiC devices can help designers build more efficient and compact medium-voltage power-conversion systems. At these voltage and current levels, however, the semiconductor's performance is only one part of the engineering challenge. Gate-drive design, insulation, thermal management, fault handling and power-loop layout all become critical.

Toshiba IX800FXF2YMS4: Main specifications

The following table summarizes the principal specifications published by Toshiba.

Parameter	Specification
Manufacturer	Toshiba Electronic Devices & Storage
Part number	IX800FXF2YMS4
Semiconductor technology	Third-generation SiC MOSFET
Module configuration	Dual SiC MOSFET
Drain-source voltage,	3,300 V
DC drain current,	800 A
Pulsed drain current,	1,600 A
Maximum channel temperature	175°C
Gate-source voltage rating	+25 V / −10 V
Isolation voltage	6,000 Vrms for 60 seconds
Typical drain-source on-voltage (sense)	1.4 V
Typical turn-on switching energy	185 mJ
Typical turn-off switching energy	175 mJ
Diode limit value	300 kA²s
Typical P-to-N terminal stray inductance	12 nH
Package	iXPLV™
Typical package dimensions	144 × 99.5 × 40 mm

How does a 3.3 kV SiC module compare with silicon IGBT modules?

Silicon IGBTs have long been used in high-power industrial converters. SiC MOSFET modules offer a different balance of switching speed, conduction behavior and temperature capability.

Parameter	3.3 kV SiC MOSFET module	Silicon IGBT module
Semiconductor material	Silicon carbide	Silicon
Device behavior	MOSFET	Bipolar-conduction IGBT
Switching capability	Generally faster	Generally slower
Turn-off behavior	No conventional IGBT tail current	Tail current can contribute to turn-off loss
Conduction behavior	Resistive/on-voltage characteristics	Relatively stable saturation voltage over a range of currents
Gate drive	Voltage-controlled MOS gate	Voltage-controlled insulated gate
High-voltage application	Medium-voltage converters	Medium-voltage converters
Main selection factors	Switching energy, conduction loss, cost, thermal design	Switching energy, conduction loss, cost, thermal design

This is a general comparison rather than a claim that SiC is always superior. The actual result depends on the current, switching frequency, junction temperature, topology and operating conditions.