Weekly Electronics Tech update 11 October 2026

This week’s electronics technology developments highlight three major directions in the industry: the expansion of gallium nitride (GaN) into low-voltage, high-current power conversion, the development of higher-voltage silicon-carbide (SiC) modules for industrial power systems, and the rapid evolution of power-delivery architectures for AI data centers.

Renesas expanded its GaN portfolio with new 100 V enhancement-mode transistors. Microchip Technology and Navitas Semiconductor presented an 800 V-to-6 V GaN-based reference design for AI server racks. Infineon introduced a 27 kW three-phase power-supply solution, while Toshiba announced a 3.3 kV SiC MOSFET module aimed at demanding high-power applications.

Other notable developments included new low-power digital isolators from Toshiba, an automotive isolated gate-driver qualification from Skyworks, and aviation-focused transient-voltage-suppression diodes from Littelfuse.

For power-electronics engineers, the common theme is clear: higher power density increasingly depends on optimizing the entire conversion system—not just the semiconductor switch.

1. Toshiba Introduces a 3.3 kV High-Power SiC MOSFET Module

Company: Toshiba Electronic Devices & Storage
Announcement: 7 October 2026
Technology: 3.3 kV silicon-carbide MOSFET power module

Toshiba announced a high-power SiC MOSFET module rated for 3.3 kV operation, targeting applications that require high blocking voltage, substantial current capability and efficient power conversion.

The announced dual-SiC-MOSFET module features an 800 A drain-current rating and a diode I²t rating of 300 kA²s, according to the product announcement. These characteristics position it for demanding industrial power-conversion systems.

2. Renesas Expands Its GaN Portfolio with 100 V Enhancement-Mode Transistors

Company: Renesas Electronics
Announcement: 6 October 2026
Technology: 100 V enhancement-mode GaN FETs

Renesas announced its first family of 100 V enhancement-mode GaN discrete power transistors, extending its GaN portfolio into lower-voltage applications. The devices target AI data centers, robotics, factory automation, industrial motor drives, power tools and solar microinverters.

3. Microchip and Navitas Develop an 800 V-to-6 V GaN Reference Design for AI Data Centers

Companies: Microchip Technology and Navitas Semiconductor
Announcement: 5 October 2026
Application: High-density AI server power delivery

Microchip Technology and Navitas Semiconductor announced an 800 V-to-6 V DC/DC reference design for AI data-center rack power systems. The platform combines Microchip’s digital power-control and security technologies with Navitas GaNFast power devices and is designed around the Open Compute Project’s 800 V DC architecture.

4. Infineon Introduces a 27 kW Three-Phase PSU Solution for AI Servers

Company: Infineon Technologies
Announcement: 8 October 2026
Application: Next-generation AI server power architecture

Infineon announced a 27 kW three-phase power-supply solution for next-generation AI server racks. The reference design supports 800 V DC and ±400 V DC power architectures and is aligned with the Open Compute Project Open Rack V3 specification.

5. Toshiba Launches Low-Power Dual-Channel Digital Isolators

Company: Toshiba Electronic Devices & Storage
Announcement: 5 October 2026
Technology: Dual-channel digital isolation

Toshiba announced four low-power dual-channel digital isolators designed for isolated signal transmission in electronic systems. The announced family combines typical channel current of 0.2 mA, data rates up to 25 Mbps, common-mode transient immunity of 30 kV/µs and isolation rated at 3,000 Vrms.

6. Skyworks Qualifies Its Si829x Automotive Isolated Gate Driver

Company: Skyworks Solutions
Announcement: 8 October 2026
Product family: Si829x automotive isolated gate drivers

Skyworks announced automotive qualification for its Si829x isolated gate-driver family. The devices use 15 A three-phase variable-current control to help reduce switching losses and support configurable SiC and IGBT power-stage designs.

7. Littelfuse Introduces FlatSuppressX TVS Diodes for Aviation

Company: Littelfuse
Announcement: 7 October 2026
Technology: Transient-voltage-suppression diodes

Littelfuse introduced its FlatSuppressX family of transient-voltage-suppression (TVS) diodes for aviation applications. The announced axial-leaded devices offer surge ratings of 6 kA, 8 kA and 10 kA, with stable clamping behavior and MIL-STD-750 screening.