Vishay Launches Four 650 V Superjunction MOSFET Power Modules

Vishay Intertechnology has introduced four new 650 V superjunction MOSFET power modules aimed at high-efficiency industrial power-conversion applications. The new devices combine Vishay's latest 650 V superjunction MOSFET technology with the established SOT-227 power-module package, providing designers with high current capability while maintaining a familiar mechanical and electrical interface.

The four new devices are:

• VS-FC50SA65
• VS-FC100SA65
• VS-FC150SA65
• VS-FC50LA65

Three of the devices are single-switch MOSFET modules with nominal current ratings of 50 A, 100 A and 150 A, while the VS-FC50LA65 is a 50 A low-side chopper module incorporating a 650 V SiC diode.

Vishay announced the devices on 1 October 2026, describing them as a way to improve power-conversion efficiency through an optimized trade-off between MOSFET on-resistance and gate charge while allowing designers to use the familiar SOT-227 mechanical format.

These devices are particularly relevant to engineers working on DC/DC converters, DC/AC inverters, solar inverters, EV charging equipment, UPS systems, industrial power supplies, welding equipment, rail power systems and high-voltage DC infrastructure.

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New Vishay 650 V MOSFET Module Family

The basic specifications of the four devices are summarized below.

Device	Configuration	Voltage	Current	Typical RDS(on)	Gate Charge
VS-FC50SA65	Single switch	650 V	50 A	44 mΩ	167 nC
VS-FC100SA65	Single switch	650 V	100 A	22 mΩ	338 nC
VS-FC150SA65	Single switch	650 V	150 A	14.8 mΩ	508 nC
VS-FC50LA65	Low-side chopper + SiC diode	650 V	50 A	45 mΩ	167 nC

All four devices have a specified operating junction-temperature range of −55°C to +150°C. Vishay states that samples and production quantities are available, with a stated lead time of 12 weeks.

The most important design feature is the balance between RDS(on) and Qg.

This is important because simply reducing MOSFET resistance is not enough for a high-frequency converter. Lower RDS(on) reduces conduction losses, but increasing silicon area can increase gate charge and therefore switching losses. The designer therefore has to find a practical balance.

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How These Modules Compare Conceptually with SiC MOSFETs

The arrival of new 650 V superjunction MOSFETs does not mean silicon MOSFETs are competing directly against SiC MOSFETs in every application. Instead, the choice depends heavily on the switching conditions.

A simplified comparison is:

Parameter	650 V Superjunction MOSFET	650/750 V SiC MOSFET
Material	Silicon	Silicon carbide
Cost	Generally lower	Generally higher
Conduction loss	Very competitive	Very competitive
Switching speed	Good	Excellent
Reverse recovery	Body-diode dependent	Very low reverse recovery
High-frequency operation	Good	Excellent
High-temperature performance	Good	Excellent
Typical advantage	Cost/performance	High efficiency/high frequency

For moderate switching frequencies, a superjunction MOSFET can be extremely competitive.For very high-frequency hard switching, the low switching losses and superior diode characteristics of SiC can justify the additional cost. The designer therefore needs to calculate total system loss, not simply compare RDS(on).

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15. Why This Vishay Launch Is Important

The significance of these devices is not simply that Vishay has introduced another 650 V MOSFET. The more important point is that Vishay is combining:

• 650 V superjunction technology
• high-current module construction
• optimized RDS(on)-Qg characteristics
• SOT-227 compatibility

This makes the devices attractive for engineers who want to improve the efficiency of existing industrial equipment without completely redesigning the power stage. The product range also provides a useful progression:

50 A → 100 A → 150 A

with progressively lower typical RDS(on):

44 mΩ → 22 mΩ → 14.8 mΩ

while the gate charge increases:

167 nC → 338 nC → 508 nC

That progression itself demonstrates the fundamental engineering compromise between conduction performance and switching performance.